Multiple gate field-effect transistors having oxygen-scavenged gate stack

ABSTRACT

A method includes forming a silicon cap layer on a semiconductor fin, forming an interfacial layer over the silicon cap layer, forming a high-k gate dielectric over the interfacial layer, and forming a scavenging metal layer over the high-k gate dielectric. An anneal is then performed on the silicon cap layer, the interfacial layer, the high-k gate dielectric, and the scavenging metal layer. A filling metal is deposited over the high-k gate dielectric.

BACKGROUND

As the gate length of the field-effect transistor is reduced,short-channel effects such as drain-induced barrier lowering areworsened and off-state leakage current is increased. To suppressshort-channel effects and to reduce off-state leakage current, theequivalent silicon oxide thickness (EOT) needs to be scaled down. Forthe field-effect transistors with gate lengths well below 20 nm, the EOTneeds to be reduced below 1 nm.

Reducing the EOT by reducing the physical thickness of a givendielectric material increases the gate leakage current density, which isundesirable, as the gate leakage current density needs to be kept incheck within certain limits. By adopting a gate dielectric with a higherdielectric permittivity or k value, the physical thickness of the gatedielectric material can be increased for a given gate capacitancedensity, and the gate leakage current density can be effectivelysuppressed.

High-k value gate dielectric is used with metal gate electrodes inadvanced Complementary Metal-Oxide-Semiconductor (CMOS) technologygenerations to enable the further scaling of the transistor gate lengthwhile controlling short-channel effect. A common high-k value gatedielectric used in the industry is hafnium oxide (HfO₂) with a k valueof about 20 or higher. HfO₂ is commonly formed on an interfacial layercomprising SiO₂, which is formed using atomic layer deposition. Hafniumsilicate (HfSi_(x)O_(y)) with a medium k value of about 10 may also beused.

The total EOT of a gate dielectric stack including a high-k value gatedielectric on an interfacial layer is equal to the sum of the EOT of thehigh-k gate dielectric and the EOT of the interfacial layer. To reducethe EOT of the gate dielectric stack, a gate dielectric material with ak value higher than that of HfO₂, such as lanthanum oxide or otherdielectric materials with k value larger than 25, may be used in thegate stack. Alternatively, the thickness of the interfacial layer may bereduced or eliminated by scavenging oxygen from it. In other approachesfor reducing the EOT, the permittivity of the interfacial layer may beincreased.

In above-mentioned approaches, the interface state density should bekept low (preferably close to or below 10¹¹/cm² eV) to prevent thedegradation of the carrier mobility in the channel, and the gate stackreliability should not be worsened.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A through 17C illustrate the cross-sectional views in theformation of a Fin Field-Effect Transistor (FinFET) in accordance withsome embodiments.

FIGS. 18 and 19 illustrate the cross-sectional views of Metal-OxideSemiconductor Field-Effect Transistors (MOSFETs) having nanowires inaccordance with some embodiments.

FIG. 20 illustrates a process flow for forming a FinFET in accordancewith some embodiments.

FIGS. 21A through 21F illustrate the cross-sectional views in theformation of semiconductor fins in accordance with some embodiments.

FIGS. 22A through 22G illustrate the cross-sectional views in theformation of semiconductor fins in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

A method of forming a Fin Field-Effect Transistor (FinFET) throughoxygen scavenging is provided in accordance with various exemplaryembodiments. The intermediate stages of forming the FinFET areillustrated. Some variations of the embodiments are discussed.Throughout the various views and illustrative embodiments, likereference numbers are used to designate like elements.

FIGS. 1A through 17C illustrate the cross-sectional views and theperspective views of intermediate stages in the formation of a FinFET inaccordance with some embodiments. The steps shown in FIGS. 1A through17C are also illustrated schematically in the process flow 200 shown inFIG. 20. In the subsequent discussion, the process steps shown in FIGS.1A through 17C are discussed referring to the process steps in FIG. 20.

FIGS. 1A and 1B illustrate a cross-sectional view and a perspectiveview, respectively, of an integrated circuit structure. FIG. 1Aillustrates the cross-sectional view of a single semiconductor fin 22(among a plurality of fins 22 as shown in FIG. 1B). Semiconductor fin 22is formed over semiconductor substrate 20, which may be a part of awafer. In accordance with some embodiments of the present disclosure,substrate 20 is a semiconductor substrate, which may further be asilicon substrate, a relaxed silicon carbon substrate, a relaxed silicongermanium substrate, a silicon-on-insulator substrate or a substrateformed of other semiconductor materials. Substrate 20 may be lightlydoped with a p-type or an n-type impurity.

Semiconductor fin 22 protrudes over the top surfaces of nearby isolationregions 24, which may be Shallow Trench Isolation (STI) regions. Inaccordance with some embodiments, semiconductor fin 22 is a silicongermanium fin, wherein the silicon germanium is expressed asSi_(1-x)Ge_(x), with value x being the mole fraction (or atomicpercentage) of germanium. The germanium percentage x may be higher thanabout 0.2, higher than 0.4, higher than 0.6, or as high as 1. Whengermanium percentage x is 1, semiconductor fin 22 is a germanium finfree from silicon. The pitch of semiconductor fins 22 (FIG. 1B) may besmaller than 30 nm, smaller than 24 nm, or even smaller than 15 nm. Thetop fin width W1 may be smaller than 10 nm, smaller than about 8 nm, oreven smaller than about 6 nm. Fin height H1 may be greater than about 30nm, or greater than about 60 nm. Fin height H1 is the verticaldisplacement between the top surface of fin 22 and the top surfaces ofisolation regions 24. Bottom fin width W2 may be equal to or slightlygreater than top fin width W1. The sidewalls of semiconductor fin 22 aresubstantially straight and substantially vertical.

Isolation regions 24 are formed adjacent to semiconductor fin 22. Inaccordance with some embodiments of the present disclosure, isolationregions 24 are formed of silicon oxide, and may be deposited usingChemical Vapor Deposition (CVD). The interface between the silicongermanium that forms semiconductor fin 22 and the underlying substrate20 may be offset from the surface of the isolation region. The offset OSmay be in the range from between about −10 nm (when the interface ishigher than the top surfaces of isolation regions 24) to about 10 nm(when the interface is lower than the top surfaces of isolation regions24), as an example.

In accordance with some embodiments of the present disclosure, a relaxedor partially relaxed silicon germanium layer 26 is formed as a topportion of substrate 20. For example, FIG. 1A schematically illustratesSi_(1-y)Ge_(y) layer 26. The germanium percentage y is lower thangermanium percentage x of fin Si_(1-x)Ge_(x) 22. By selecting x to belarger than y, the natural lattice constant of the Si_(1-x)Ge_(x) fin22, which forms the channel of the resulting FinFET, is larger than thenatural lattice constant of Si_(1-y)Ge_(y) layer 26. Accordingly, thechannel (Si_(1-x)Ge_(x)) of the resulting FinFET will be undercompressive stress or strain.

Si_(1-x)Ge_(x) fins 22 may be formed together with silicon fins. FIG. 1Billustrates a plurality of Si_(1-x)Ge_(x) fins 22 adjacent to aplurality of silicon fins 23 (free from germanium) formed on a relaxedor partially relaxed silicon germanium (Si_(1-y)Ge_(y)) layer 26. SiGefins 22 and silicon fins 23 may, or may not, have the same physicaldimensions such as fin widths W1 and W2 and/or fin height H1 (FIG. 1A).In accordance with some embodiments of the present disclosure,Si_(1-x)Ge_(x) fins 22 are used to form p-channel FinFETs, while siliconfins 23 are used to form n-channel FinFETs. Since silicon fins 23 areformed on the fully or partially relaxed Si_(1-y)Ge_(y) layer 26,silicon fins 23 are under tensile stress (strain) in the channel-lengthdirection. The presence of tensile strain in the channel-lengthdirection increases the electron mobility in silicon, and improves thedrive currents and the speed of the n-channel FinFETs.

An exemplary process for forming Si_(1-x)Ge_(x) fins 22 is brieflydescribed as follows. The respective step is illustrated as step 202 inthe process flow shown in FIG. 20. The corresponding steps in accordancewith some embodiments are schematically illustrated in FIGS. 21A through21F. First, as shown in FIG. 21A, semiconductor substrate 20 isprovided. Semiconductor substrate 20 may be a silicon substrate, arelaxed SiGe substrate (or a relaxed SiGe layer on a silicon substrate),or formed of other materials, as aforementioned. STI regions 24 areformed extending into semiconductor substrate 20, as shown in FIG. 21B.Adjacent STI regions 24 sandwich narrow a strip of substrate 20 inbetween. The substrate strip may be recessed by etching, as shown inFIG. 21C, resulting in recess 25. The bottoms of recess 25 may be higherthan the bottom surfaces of STI regions 24. Next, as shown in FIG. 21D,semiconductor region 22 is selectively grown in recess 25 (FIG. 21C)through epitaxy. Semiconductor region 22 may be formed silicon whensubstrate 20 is a SiGe substrate (or contains a relaxed SiGe layer), ormay be a Si_(1-x)Ge_(x) region when substrate 20 is a silicon substrate.STI regions 24 are then recessed to form semiconductor fins. Forexample, FIG. 21E illustrates SiGe fin 22 on substrate 20 formed ofsilicon, and FIG. 21F illustrates silicon fin 23 on substrate 20comprising SiGe.

FIGS. 22A through 22G illustrate the formation of semiconductor fins 22Aand 22B in accordance with some embodiments. Referring to FIG. 22A,substrate 20 is provided. Substrate 20 may be a bulk silicon substrate,or may include a relaxed Si_(1-y)Ge_(y) layer 26. FIG. 22B illustratesthe formation of STI regions 24 in substrate 20 or relaxed SiGe layer26. Next, as shown in FIG. 22C, recess 25A is formed by recessing aportion of substrate 20 or SiGe layer 26. Referring to FIG. 22D,Si_(1-x)Ge_(x) region 22 (denoted as 22A) is formed in recess 25A (FIG.22C) through epitaxy, wherein germanium atomic percentage x is greaterthan germanium atomic percentage y. Furthermore, at the time recess 25Ais formed, recess 25B may be simultaneously formed, as shown in FIG.22E. Referring to FIG. 22F, Si_(1-z)Ge_(z) region 22 (denoted as 22B) isformed in recess 25B through epitaxy, wherein value germanium atomicpercentage z is smaller than germanium atomic percentage y. In asubsequent step, STI regions 24 (as shown in FIGS. 22D and 22F) arerecessed, resulting in the structure shown in FIG. 22G, in which fins 22(including 22A and 22B) are formed on the same substrate 20.

The structure formed in the steps shown in FIGS. 21A through 21F andFIGS. 22A through 22G are also shown in FIGS. 1A and 1B. The resultingSTI regions may have depth Dl (FIG. 1A) in the range between about 200nm, and about 1,000 nm.

FIG. 2 illustrates the passivation of SiGe fin 22. The respective stepis illustrated as step 204 in the process flow shown in FIG. 20. Inaccordance with some embodiments of the present disclosure, thepassivation includes depositing cap layer 28 over fin 22. Cap layer 28extends on, and contacts, the top surface and sidewalls of SiGe fin 22.Cap layer 28 protects SiGe fin 22 from the damage in subsequentprocessing. Cap layer 28 may be formed on both SiGe fins 22 and siliconfins 23 (FIG. 1B), or on SiGe fins 22 but not on silicon fins 23.

In accordance with some embodiments of the present disclosure, cap layer28 is made of crystalline silicon, and can be formed over the SiGe fins22 through low-temperature epitaxy using silane (SiH₄), disilane(Si₂H₆), trisilane (Si₃H₈), or other silicon-containing precursors suchas high-order silanes. The silicon-containing precursors may alsocontain chlorine, e.g. SiH₂Cl₂. The epitaxy growth temperature may be anelevated temperature higher than room temperature (about 21° C.). Forexample, the temperature may be about 500° C. or lower, 425° C. orlower, and even 375° C. or lower. A low growth temperature minimizes thelikelihood of germanium segregation during the epitaxy, wherein thesegregation of germanium leads to the undesirable formation of agermanium cap. Cap layer 28 may have a thickness smaller than about 1.5nm.

In accordance with some embodiments of the present disclosure, cap layer28 is an amorphous silicon layer deposited by CVD. The deposition may beperformed at about 400° C. or below. In accordance with yet alternativeembodiments, cap layer 28 is a dielectric layer formed of silicon oxide(SiO₂) or other dielectrics. The formation methods may include AtomicLayer Deposition (ALD). Cap layer 28 may also comprise a III-V compoundsemiconductor layer such as Indium Aluminum Phosphide (InAlP) or IndiumGallium Phosphide (InGaP). It is appreciated that cap layer 28 may alsocomprise multiple layers or combinations of the materials inabove-mentioned embodiments. For example, cap layer 28 may compriseamorphous silicon on crystalline silicon, SiO₂ on crystalline silicon,or SiO₂ on amorphous silicon on crystalline silicon.

FIGS. 3A and 3B illustrate a cross-sectional view and a perspectiveview, respectively, in the formation of dummy gates 34. The respectivestep is illustrated as step 206 in the process flow shown in FIG. 20. Inaccordance with some embodiments, dummy gates 34 includes dummy gatedielectric 30 over fins 22 and 23 (FIG. 3B), and dummy gate electrodes32 over dummy gate dielectric 30. Dummy gate dielectric 30 may be formedof silicon oxide, and dummy gate electrode 32 may be formed ofpoly-crystalline silicon (poly-Si). The formation process may includethe deposition of dummy gate dielectric 30 and dummy gate electrode 32,and a planarization to level the top surface of dummy gate electrodes32. In addition, dummy gates 34 may include hard mask 35, which may beformed of silicon oxide or silicon nitride. A photolithography step isthen performed to pattern the deposited dummy gate dielectric 30, dummygate electrode 32, and hard mask 35. Accordingly, the structure shown inFIGS. 3A and 3B is resulted.

FIGS. 4A, 4B, 5A and 5B illustrate the formation of source and drainregions. The respective step is illustrated as step 208 in the processflow shown in FIG. 20. FIGS. 4A and 4B are cross-sectional view andperspective view, respectively. First, gate spacers 38 are formed on thesidewalls of dummy gates 34. The formation process includes a blanketdeposition step followed by a dry etch process. Gate spacers 38 maycomprise silicon nitride, silicon carbide, silicon oxynitride, siliconoxide, combinations thereof, or multi-layers thereof.

After the formation of gate spacers 38, the exposed fins 22 are recessedthrough etching, hence forming recesses 40. The resulting structure isalso shown in FIGS. 4A and 4B. Next, as shown in FIGS. 5A and 5B, whichillustrate a cross-sectional view and a perspective view, respectively,source/drain regions 42 are formed. In accordance with some embodimentsof the present disclosure, the formation of source/drain regions 42 (ofa p-channel FinFET) is separated from the formation of the source/drainregions (not shown, similar to source/drain regions 42) of n-channelFinFETs. In the epitaxy of source/drain regions 42, a p-type impuritymay be in-situ doped with the proceeding of the epitaxy. After theepitaxy, an ion implantation may (or may not) be performed to introducea p-type impurity or other contact-resistance enhancing species (such asytterbium, aluminum, tin, etc.) into source/drain regions 42.

Similarly, in the epitaxy of the source/drain regions of n-channelFinFETs, an n-type impurity may be in-situ doped with the proceeding ofthe epitaxy. After the epitaxy, an ion implantation may (or may not) beperformed to introduce an n-type impurity or other contact-resistanceenhancing species (such as ytterbium, aluminum, tin, etc.) into thesource/drain regions of n-channel FinFETs.

Next, a source/drain dopant activation anneal may be performed,employing rapid thermal annealing (RTA), millisecond anneal (MSA) spikeanneal, laser annealing (LSA), or other annealing techniques.

FIGS. 6A, 6B, 7A, and 7B illustrate the formation of source/drainregions 42 and the source/drain regions of n-channel FinFETs inaccordance with some embodiments of the present disclosure. Theseembodiments are similar to the embodiments shown in FIGS. 4A, 4B, 5A and5B, except that before the epitaxy, fins 22 and 23 are thinned (as shownin FIG. 6B), rather than fully etched. In the thinning process, fins 22are laterally etched slightly. For example, if the original fin width is6 nm, the fin width may be reduced by about 1 nm to about 2 nm on eachside. After the thinning of fins 22 and 23, source/drain epitaxyprocesses are performed to finish the formation of source/drain regions42 and the source/drain regions of n-channel FinFETs, wherein theprocess details may be the same as discussed referring to FIGS. 6A and6B. FIG. 7B illustrates a cross-sectional view obtained from thevertical plane containing line 7B-7B in FIG. 7A.

In accordance with some embodiments, main spacers 45 are formed, asshown in FIG. 8. The formation of main spacers 45 may include formingone or a plurality of blanket dielectric layers such as silicon oxide,silicon nitride, or the like, and etching the blanket dielectric layersto remove the horizontal portions of the dielectric layers. Theremaining vertical portions of the blanket dielectric layers are themain spacers.

Further referring to FIG. 8, Contact Etch-Stop Layer (CESL) 46 isdeposited. CESL 46 may comprise silicon nitride (Si₃N₄) having anintrinsic stress with a magnitude of 1 GPa or higher. In accordance withsome embodiments of the present disclosure, other dielectric materialhaving an intrinsic stress with a magnitude greater than 1 GPa may alsobe used. The intrinsic stress is compressive for p-channel FinFETs andtensile for n-channel FinFETs.

Next, Inter-Layer Dielectric (ILD) 50 is formed. The formation processmay comprise the deposition of a flowable CVD dielectric followed by athermal curing or a ultra-violet radiation curing, so that silicon oxide(SiO₂) is formed. A planarization is then performed to planarize the topsurface of ILD 50. The resulting structure is shown in FIG. 9. Next, ILD50 is recessed slightly, so that recesses 52 are formed, as shown inFIG. 10. In subsequent process steps, hard mask 54 is deposited (FIG.11), followed by a planarization step as shown in FIG. 12A. Hard mask 54may comprise silicon nitride (Si₃N₄), which protects ILD 50 and theunderlying structures in the subsequent process steps.

FIG. 12B illustrates a perspective view showing a portion of thestructure in FIG. 12A. As shown in FIG. 12, semiconductor fins 22 arecovered by dummy gates 34.

FIGS. 13A through 17C illustrate the cross-sectional views andperspective views of a Replacement Gate (or RPG) process, in which dummygates 34 (FIGS. 12A and 12B) are replaced with replacement gates. In thefollowing discussion, the replacement of the gate of p-channel FinFET isdiscussed as an example. The concept of the teaching is readilyapplicable to the formation of the replacement gate of n-channelFinFETs.

FIGS. 13A and 13B illustrate a cross-sectional view and a perspectiveview, respectively, in the removal of dummy gates 34 as shown in FIGS.12A and 12B. Recess 51 is thus formed. The respective step isillustrated as step 210 in the process flow shown in FIG. 20. First,dummy gate electrode 32 and dummy gate dielectric 30 (FIG. 3A) areremoved through etching. Accordingly, cap layer 28 as shown in FIG. 3Ais exposed. In the embodiments in which cap layer 28 is a crystallinesilicon layer, cap layer 28 may be removed or may be kept un-removed. Inthe embodiments in which cap layer 28 is not form of crystallinesilicon, cap layer 28 is removed. The respective step is illustrated asstep 212 in the process flow shown in FIG. 20. Removing cap layer 28advantageously removes any contamination in cap layer 28.

A crystalline silicon cap layer 56 is then epitaxially grown. Therespective step is illustrated as step 214 in the process flow shown inFIG. 20. The resulting structure showing the resulting cap layer isshown in FIG. 14, which shows the silicon cap layer as 59, which mayinclude crystalline silicon layer 28 only, crystalline silicon layer 56only, or crystalline silicon layer 56 on crystalline silicon layer 28.The thickness of crystalline silicon layer 59 may range from 1 atomiclayer (about 0.136 nm) to about 20 atomic layers (about 2.7 nm). Inaccordance with some exemplary embodiments, the thickness of siliconlayer 59 is less than 10 atomic layer (about 1.36 nm) thick.

In some embodiments in which silicon cap 59 is epitaxially grown in theRPG process segment, it may be grown on both SiGe fins 22 (for p-channeldevices) as well as the silicon fins 23 (for n-channel devices, FIG.3B). Alternatively, silicon cap 59 may be grown on SiGe fins 22, but noton silicon fins 23, which will be covered by a hard mask such as SiO₂ toprevent the epitaxy of cap layer 59 from being formed on silicon fins23.

Crystalline silicon layer 59 has the advantageous features of blockinggermanium atoms in SiGe fins 22 from diffusing outwardly into thesubsequently formed high-k dielectric material to form undesirablecompounds. In addition, crystalline silicon layer 59 also preventsgermanium from reacting with the oxygen in the subsequently formedinterfacial layer (such as silicon oxide) to form undesirable germaniumoxide. However, at corners 57 (FIG. 14), crystalline silicon layer 59maybe much thinner than in other locations such as the vertical andhorizontal portions of crystalline silicon layer 59. This results in theblocking ability of crystalline silicon layer 59 to be compromised.FIGS. 15A, 15B, and 16 illustrate an oxygen scavenging process forincreasing the thickness of crystalline silicon at corners 57.

After the structure as shown in FIG. 14 is formed, a surface cleaning isperformed, for example, using diluted HF solution. Next, as shown inFIG. 15A, interfacial layer 58 is formed on crystalline silicon layer59. The respective step is illustrated as step 216 in the process flowshown in FIG. 20. Interfacial layer 58 is formed of silicon oxide, whichmay be formed by plasma-enhanced atomic layer deposition. Alternatively,interfacial layer 58 may be formed by CVD, thermal oxidation using watersteam (H₂O) or O₂, or gas phase or liquid phase chemical oxidation usingan oxidizing agent such as hydrogen peroxide (H₂O₂) or ozone (O₃). Thethickness of interfacial layer 58 may be less than 1 nm.

Next, high-permittivity (high-k) gate dielectric 60 is formed oninterfacial layer 58. The respective step is also illustrated as step216 in the process flow shown in FIG. 20. In accordance with someembodiments of the present disclosure, high-k gate dielectric 60 isformed of hafnium oxide (HfO₂), for example, by using ALD. High-k gatedielectric 60 may also comprise zirconium oxide (ZrO₂), lanthanum oxide(La₂O₃), titanium oxide (TiO₂), yttrium oxide (Y₂O₃), strontium titanate(SrTiO₃), or combinations thereof. The physical thickness of the high-kgate dielectric 60 may be in the range between about 1.0 nm and about 10nm.

Oxygen-scavenging metal layer 62 is deposited on high-k gate dielectric60. The respective step is illustrated as step 218 in the process flowshown in FIG. 20. Scavenging metal layer 62 has a higher affinity foroxygen than the metal in the metal-oxide (in high-k gate dielectric 60)and silicon (in interfacial layer 58). Scavenging metal layer 62 mayinclude a metal or a metal compound such as Ti, Hf, Zr, Ta, Al, TiN,TaN, TaSiN, TiSiN, or combinations thereof such as TiAl. Scavengingmetal layer 62 may also be formed of a metal nitride (e.g. TiN or TaN),or a nitride of a metal alloy such as TiAlN. The deposition methodsinclude physical vapor deposition, CVD, or ALD. Scavenging metal layer62 has the function of scavenging oxygen from interfacial layer 58 atelevated temperatures.

In accordance with some embodiments of the present disclosure,scavenging-metal-capping layer 64 is formed on top of scavenging metallayer 62 to prevent the oxidation of scavenging metal layer 62, whereinthe oxidation may occur before, during, or after the subsequentscavenging anneal. Scavenging-metal-capping layer 64 may compriseanother metal or metal compound such as TiN, TiSiN, TaN, TaSiN.Alternatively, scavenging-metal-capping layer 64 is a silicon layer.Scavenging-metal-capping layer 64 and scavenging metal layer 62 areformed of different materials, although some of their candidatematerials may be the same. In alternative embodiments, noscavenging-metal-capping layer is formed.

Next, a scavenging anneal process (represented by arrow 66 in FIG. 15A)is performed to initiate and enable the scavenging. The respective stepis also illustrated as step 218 in the process flow shown in FIG. 20.The scavenging anneal may be performed using spike annealing, with thetime duration being milliseconds, for example, between about 10milliseconds and about 500 milliseconds. The temperatures of therespective wafer may be in the range between about 400° C. and about1,100° C. In accordance with some exemplary embodiments, the temperatureis in the range between about 700° C. and about 1,000° C.

The oxygen scavenging process chemically reduces interfacial layer 58,and interfacial layer 58 has a reduced thickness or may be eliminated(fully converted). The scavenging process deprives oxygen from at leastthe bottom portion of interfacial layer 58, and hence the silicon ininterfacial layer 58 remains to form an additional silicon layer on topof crystalline silicon layer 59. FIG. 15B illustrates a magnified viewof portion 65 in FIG. 15A. Arrows 67 are shown in FIG. 15B to indicatethe movement of oxygen atoms due to the scavenging. Accordingly, asshown in FIG. 16, crystalline (or polycrystalline/amorphous) siliconlayer 70 is formed, which includes crystalline silicon layer 59 and theadditional silicon layer on top of crystalline silicon layer 59. Theadditional silicon layer is formed of the remaining silicon ofinterfacial layer 58 after oxygen is scavenged from the bottom portionof interfacial layer 58. The middle portion of interfacial layer 58 mayremain after the scavenging process, or alternatively, no interfaciallayer 58 remains after the scavenging. In the resulting structure inFIG. 16, the remaining interfacial layer 58 is shown using dashed linesto indicate that it may or may not exist after the scavenging anneal.

Advantageously, the formation of a silicon layer as a result of thescavenging is enhanced by the presence of silicon cap layer 59underlying the interfacial layer 58, and the thickness uniformity of theresulting silicon layer is improved. At corners 57, the epitaxiallygrown silicon cap layer 59 may be thin, and germanium segregation issuesmay be severe at corners 57. In some embodiments of the presentdisclosure, the thickness of silicon layer is increased due to thescavenging process, and hence the blocking ability of the silicon caplayer is improved. Particularly, the increase in the thickness of thesilicon cap layer at corners 57 significantly improves the blockingability of the silicon cap layer and reduces germanium segregation atcorners 57.

During the scavenging anneal process, high-k gate dielectric 60 mayintermix with the top portion of interfacial layer 58 and the oxygenscavenged from the bottom portion of interfacial layer 58 to form anintermix compound, which may be a metal silicate. Layer 72 isillustrated to represent the intermix compound and the remaining high-kgate dielectric 60 (if any), which is likely to have increased oxygencontent. For example, when high-k gate dielectric 60 comprises HfO₂,intermix compound 72 comprises hafnium silicate (HfSiO₄). When high-kgate dielectric 60 comprises ZrO₂, intermix compound 72 compriseszirconium silicate (ZrSiO₄).

After the scavenging process, scavenging-metal-capping layer 64 may beremoved by etching. Scavenging metal layer 62 may also be removed, ormay be left un-removed. The respective removal step is illustrated asstep 220 in the process flow shown in FIG. 20. In the embodiments inwhich the fin pitch is very smaller, such as smaller than about 24 nm,scavenging metal layer 62 is more likely to be removed to improve thesubsequent metal filling. In accordance with alternative embodiments.scavenging metal layer 62 is not removed.

Next, as shown in FIGS. 17A, 17B, and 17C, a metal filling process isperformed to form replacement metal gate 74. The respective step isillustrated as step 222 in the process flow shown in FIG. 20. An n-typemetal stack (for n-channel transistor) and a p-type metal stack (forp-channel transistor) may be formed independently, depending on the typeof the resulting FinFET, in order to allow independent optimization ofthe electrical performance of the n-channel and p-channel FinFETs. Metalstack 74 may include a work function layer, a barrier layer, and afilling metal layer (not shown). The n-type metal work function layercomprises a metal with sufficiently low effective work function,selected from but not restricted to the group of titanium, aluminum,tantalum carbide, tantalum carbide nitride, tantalum silicon nitride, orcombinations thereof. The p-type metal work function layer comprises ametal with a sufficiently large effective work function, selected frombut not restricted to the group of titanium nitride, tantalum nitride,ruthenium, molybdenum, tungsten, platinum, or combinations thereof. Thefilling metal layer may include aluminum, tungsten, copper, or otherconductive metals. A chemical mechanical polishing step is thenperformed to planarize the various metal layers, and to provide asubstantially planar surface for forming a multi-layer interconnection.FIGS. 17A, 17B, and 17C illustrate a cross-sectional view inchannel-width direction, a perspective view, and a cross-sectional viewin channel-length direction, respectively, of the resulting FinFET 76.Next, contact plugs (not shown) may be formed. The respective step isillustrated as step 224 in the process flow shown in FIG. 20.

FIGS. 18 and 19 illustrate two structures that can be applied with theteaching of the present disclosure. In FIG. 18, NMOS device 300 includesa plurality of silicon nanowires 302 that may be used to form agate-all-around transistor. It is noted that although nanowires 302 areillustrated as suspended, they are actually supported on opposite ends,which are not in the illustrated plane. PMOS device 400 includes SiGenanowires 402 and silicon nanowires 404 stacked in an alternatinglayout, with silicon nanowires 404 having a reduced width than SiGenanowires 402. Nanowires 302, 402 and 404 are formed over siliconsubstrate 20.

In FIG. 19, NMOS device 300 includes a plurality of germanium nanowires312 (which may be free from silicon) that may be used to form agate-all-around transistor. PMOS device 400 includes germanium nanowires422 and SiGe nanowires 414 stacked in an alternating layout, withsilicon nanowires 404 having a reduced width than SiGe nanowires 402.Nanowires 312, 412 and 414 are formed over SiGe substrate 420.

As shown in FIGS. 18, and 19, nanowires have a plurality of corners thatmay suffer from thin silicon capping layer and germanium segregation.Accordingly, the concept of the present disclosure may be adopted, withthe silicon cap layer 70 as shown in FIG. 16 formed wrapping aroundnanowires 302, 402 and 404 (FIG. 18) and nanowires 312, 412 and 414(FIG. 19) using the methods of the present disclosure.

The embodiments of the present disclosure have some advantageousfeatures. By using oxygen scavenging to increase the thickness of theexisting crystalline silicon layer, the thickness of the thin cornerportions of the silicon layer is increased, and the germaniumsegregation problem is prevented.

In accordance with some embodiments of the present disclosure, a methodincludes forming a silicon cap layer on a semiconductor fin, forming aninterfacial layer over the silicon cap layer, forming a high-k gatedielectric over the interfacial layer, and forming a scavenging metallayer over the high-k gate dielectric. An anneal is then performed onthe silicon cap layer, the interfacial layer, the high-k gatedielectric, and the scavenging metal layer. A filling metal is depositedover the high-k gate dielectric.

In accordance with alternative embodiments of the present disclosure, amethod includes forming a crystalline silicon cap layer on a silicongermanium fin, forming a silicon oxide layer over the silicon cap layer,forming a high-k gate dielectric over the silicon oxide layer, forming ascavenging metal layer over the high-k gate dielectric, and scavengingoxygen from a bottom portion of the silicon oxide layer to convert thebottom portion into a silicon layer, with the silicon layer continuouslyjoined with the crystalline silicon cap layer. After the scavenging, afilling metal is deposited over the high-k gate dielectric.

In accordance with alternative embodiments of the present disclosure, amethod includes forming a dummy gate stack on a middle portion of asilicon germanium fin, forming source/drain regions on opposite sides ofthe silicon germanium fin, forming an inter-layer dielectric over thesource/drain regions, with the dummy gate stack in the inter-layerdielectric, removing the dummy gate stack to form a recess in theinter-layer dielectric, and epitaxially growing a silicon cap layer inthe recess, with the silicon cap layer being on the silicon germaniumfin. A silicon oxide layer is deposited over and contacting the siliconcap layer. A high-k gate dielectric is formed over the silicon oxidelayer. A scavenging metal layer is formed over the high-k gatedielectric. The scavenging metal layer has a first affinity for oxygenhigher than a second affinity of a metal in the high-k gate dielectricand a third affinity of silicon. An anneal is performed to scavengeoxygen from at least a bottom portion of the silicon oxide layer toconvert the bottom portion into a silicon layer. After the anneal, ametal is filled into the recess.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming a silicon cap layeron a semiconductor fin; forming an interfacial layer over the siliconcap layer; forming a high-k gate dielectric over the interfacial layer;forming a scavenging metal layer over the high-k gate dielectric;performing an anneal on the silicon cap layer, the interfacial layer,the high-k gate dielectric, and the scavenging metal layer; anddepositing a filling metal over the high-k gate dielectric.
 2. Themethod of claim 1, wherein during the anneal, oxygen is scavenged from abottom portion of the interfacial layer, and the bottom portion of theinterfacial layer is converted into a silicon layer.
 3. The method ofclaim 1, wherein the forming the silicon cap layer comprises depositinga crystalline silicon layer free from germanium.
 4. The method of claim1 further comprising: before the anneal, depositing ascavenging-metal-capping layer over the scavenging metal layer, with thescavenging-metal-capping layer and the scavenging metal layer formed ofdifferent materials.
 5. The method of claim 4 further comprising: afterthe anneal, removing the scavenging-metal-capping layer.
 6. The methodof claim 1, wherein after the anneal, the interfacial layer comprises: atop portion intermixed with the high-k gate dielectric to form acompound layer; and a bottom portion converted into a silicon layer,with the silicon layer and the compound layer in contact with eachother.
 7. The method of claim 1, wherein after the anneal, theinterfacial layer comprises: a top portion intermixed with the high-kgate dielectric to form a compound layer; a bottom portion convertedinto a silicon layer; and a middle portion between and in contact withthe silicon layer and the compound layer.
 8. The method of claim 1,wherein the anneal comprises a spike anneal.
 9. A method comprising:forming a crystalline silicon cap layer on a silicon germanium fin;forming a silicon oxide layer over the crystalline silicon cap layer;forming a high-k gate dielectric over the silicon oxide layer; forming ascavenging metal layer over the high-k gate dielectric; scavengingoxygen from a bottom portion of the silicon oxide layer to convert thebottom portion into a silicon layer, with the silicon layer continuouslyjoined with the crystalline silicon cap layer; and after the scavenging,depositing a filling metal over the high-k gate dielectric.
 10. Themethod of claim 9 further comprising, after the scavenging, removing thescavenging metal layer.
 11. The method of claim 9 further comprising:before the forming the crystalline silicon cap layer, removing a siliconlayer from the silicon germanium fin.
 12. The method of claim 11,wherein the removed silicon layer comprises amorphous silicon.
 13. Themethod of claim 9 further comprising: before the scavenging, depositinga scavenging-metal-capping layer over the scavenging metal layer, withthe scavenging-metal-capping layer and the scavenging metal layer formedof different materials.
 14. The method of claim 13 further comprising:after the scavenging, removing the scavenging-metal-capping layer.
 15. Amethod comprising: forming a dummy gate stack on a middle portion of asilicon germanium fin; forming source/drain regions on opposite sides ofthe silicon germanium fin; forming an inter-layer dielectric over thesource/drain regions, with the dummy gate stack in the inter-layerdielectric; removing the dummy gate stack to form a recess in theinter-layer dielectric; epitaxially growing a silicon cap layer in therecess, with the silicon cap layer being on the silicon germanium fin;depositing a silicon oxide layer over and contacting the silicon caplayer; forming a high-k gate dielectric over the silicon oxide layer;forming a scavenging metal layer over the high-k gate dielectric,wherein the scavenging metal layer has a first affinity for oxygenhigher than a second affinity of a metal in the high-k gate dielectricand a third affinity of silicon; performing an anneal to scavenge oxygenfrom at least a bottom portion of the silicon oxide layer to convert thebottom portion into a silicon layer; and after the anneal, filling ametal into the recess.
 16. The method of claim 15 further comprising:removing an additional silicon layer from the recess, wherein theadditional silicon layer is in contact with sidewalls and a top surfaceof the silicon germanium fin, and the silicon cap layer is grown fromthe sidewalls and the top surface of the silicon germanium fin.
 17. Themethod of claim 15 further comprising: after the anneal, removing thescavenging metal layer.
 18. The method of claim 15, wherein the annealcomprises a spike anneal.
 19. The method of claim 15 further comprising:before the anneal, depositing a scavenging-metal-capping layer over thescavenging metal layer, with the scavenging-metal-capping layer and thescavenging metal layer formed of different materials.
 20. The method ofclaim 19 further comprising: after the anneal, removing thescavenging-metal-capping layer.